POWEREX, INC., 200 E. HILLIS STREET, YOUNGWOOD, PENNSYLVANIA 15697-1800 (724) 925-7272
MG200J6ES61
SIX IGBTMOD?
COMPACT IGBT SERIES MODULE
200 AMPERES/600 VOLTS
ABSOLUTE MAXIMUM RATINGS, T j = 25°C unless otherwise speci?ed
Characteristics
POWER DEVICE JUNCTION TEMPERATURE
STORAGE TEMPERATURE
MOUNTING TORQUE, M5 MOUNTING SCREWS
MOUNTING TORQUE, M5 MAIN TERMINAL SCREWS
MODULE WEIGHT (TYPICAL)
ISOLATION VOLTAGE, AC 1 MINUTE, 60HZ SINUSOIDAL
Symbol
T J
T STG
V ISO
MG200J6ES61
-20 TO 150
-40 TO 125
31
31
375
2500
Units
°C
°C
IN-LB
IN-LB
GRAMS
VOLTS
IGBT INVERTER SECTOR
COLLECTOR-EMITTER VOLTAGE (V D = 15V, V CIN = 15V)
GATE-EMITTER VOLTAGE
COLLECTOR CURRENT (T C = 25°C)
PEAK COLLECTOR CURRENT (T C = 25°C)
EMITTER CURRENT (T C = 25°C)
PEAK EMITTER CURRENT (T C = 25°C)
COLLECTOR DISSIPATION (T C = 25°C)
V CES
V GES
I C
I CP
I E
I EM
P C
600
±20
200
400
200
400
1000
VOLTS
VOLTS
AMPERES
AMPERES
AMPERES
AMPERES
WATTS
ELECTRICAL AND MECHANICAL CHARACTERISTICS, T j = 25°C unless otherwise speci?ed
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
IGBT INVERTER SECTOR
GATE LEAKAGE CURRENT
COLLECTOR-EMITTER CUTOFF CURRENT
GATE-EMITTER CUTOFF VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE
INPUT CAPACITANCE
INDUCTIVE LOAD
SWITCHING
TIMES
REVERSE RECOVERY TIME
EMITTER-COLLECTOR VOLTAGE
I GES
I CES
V GE(OFF)
V CE(SAT)
C IES
T D(ON)
T OFF
T F
T RR
V EC
V GE = 20V, V CE = 0V
V GE = 0V, V CE = 600V
V CE = 5V, I C = 200MA
V GE = 15V, I C = 200A, T J = 25°C
V GE = 15V, I C = 200A, T J = 125°C
V CE = 10V, V GE = 0V, F = 1MHZ
V CC = 300V, I C = 200A,
V GE = ±15V, R G = 10 Ω
I E = 200A
5.0
6.5
2.0
40,000
2.2
±500
1.0
8.0
2.4
2.6
1.0
1.2
0.5
0.3
2.6
NA
MA
VOLTS
VOLTS
VOLTS
PF
μS
μS
μS
μS
VOLTS
THERMAL CHARACTERISTICS
Characteristic
ZERO POWER RESISTANCE
B VALUE
JUNCTION TO CASE THERMAL RESISTANCE
CONTACT THERMAL RESISTANCE
Symbol
R25
B25/85
R TH(J-C)Q
R TH(J-C)D
R TH(C-F)
Condition
I TM = 0.2MA
T C = 25°C/T C = 85°C
IGBT (PER 1/6 MODULE)
FWDI (PER 1/6 MODULE)
Min.
Typ.
100
4390
0.05
Max.
0.125
0.195
Units
K Ω
K
°C/WATT
°C/WATT
°C/WATT
RECOMMENDED CONDITIONS FOR USE
Characteristic
SUPPLY VOLTAGE
Symbol
V CC
Condition
APPLIED ACROSS P-N TERMINALS
Value
≤ 400
Units
VOLTS
GATE VOLTAGE
V GE
13.5 ^ 16.5 VOLTS
SWITCHING FREQUENCY
F C
0 ^ 20
KHZ
2
5/05
相关PDF资料
MG200Q2YS60A IGBT MOD CMPCT DUAL 1200V 200A
MG300Q2YS60A IGBT MOD CMPCT DUAL 1200V 300A
MG400J2YS61A IGBT MOD CMPCT DUAL 600V 400A
MG400Q2YS60A IGBT MOD CMPCT DUAL 1200V 400A
MG400V2YS60A IGBT MOD CMPCT DUAL 1700V 400A
MG600J2YS61A IGBT MOD CMPCT DUAL 600V 600A
MG600Q2YS60A IGBT MOD CMPCT 1200V 600A
MG800J2YS50A IGBT MOD CMPCT 600V 800A
相关代理商/技术参数
MG200M1UK1 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR MODULES
MG200Q1JS40 制造商:Toshiba America Electronic Components 功能描述:
MG200Q1UK1 制造商:n/a 功能描述:Darlington Module
MG200Q1US1 制造商:Toshiba America Electronic Components 功能描述:
MG200Q1US41 制造商:n/a 功能描述:IGBT Module
MG200Q1US51 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
MG200Q1ZS11 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
MG200Q1ZS40 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CHOPPER APPLICATIONS)